Electrolytic copper plating method phosphorous cooper anode for electrolytic copper plating method said semiconductor wafer having low particle adhension plated with said method and anode

Electrolytic copper plating method phosphorous cooper anode for electrolytic copper plating method said semiconductor wafer having low particle adhension plated with said method and anode

The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 µm...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SEKIGUCHI JUNNOSUKE,OKABE TAKEO,AIBA AKIHIRO
Format: Patent
Sprache:eng
Schlagworte:
ALLOYS
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CASTING
CASTING OF METALS
CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
PERFORMING OPERATIONS
POWDER METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
TRANSPORTING
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 µm when the anode current density during electrolysis is 3A/dm 2 or more. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.