SCHALTUNGSANORDNUNG ZUM STEUERN EINES HALBLEITER-SCHALTBAUTEILS

SCHALTUNGSANORDNUNG ZUM STEUERN EINES HALBLEITER-SCHALTBAUTEILS

A gated diode switch (GDS1, GDS31) requires a voltage applied to the gate which is more positive than that of the anode or cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must be s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHACKLE, PETER WILLIAM, RILEY, TERENCE JAMES, HARTMAN, ADRIAN RALPH
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A gated diode switch (GDS1, GDS31) requires a voltage applied to the gate which is more positive than that of the anode or cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must be sourced into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS32) coupled by the cathode (terminal 222, 322) thereof to the gate of a gated diode switch (GDS1, GDS31) which is to be controlled provides a high voltage and current capability circuitry for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS31). The state of a gated diode switch (GDS1, GDS31) is thus controlled by a second gated diode switch (GDS2, GDS32). The state of the second gated diode switch is controlled by a voltage control circuit having only relatively modest current handling capability.