CH616024
A CMOS integrated circuit structure is provided having circuit elements which can function as high resistances or stable current sources. The circuit elements include a region of intermediate doping which has a surface concentration between that of a substrate and a homogeneous region of a doped poc...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A CMOS integrated circuit structure is provided having circuit elements which can function as high resistances or stable current sources. The circuit elements include a region of intermediate doping which has a surface concentration between that of a substrate and a homogeneous region of a doped pocket formed therein. The region of intermediate doping is formed by the vicinity of two pocket edges, these edges being separated by a distance which is substantially not greater than twice the length of the lateral diffusion of the doping of the pockets. |
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