TAKTIMPULSGENERATOR, INSBESONDERE EINES ZEITHALTENDEN GERAETES

1480448 Electronic watches TOKYO SHIBAURA ELECTRIC CO Ltd 20 May 1975 [20 May 1974] 21439/75 Heading G3T [Also in Division G4] In order to reduce the current consumption in an integrated circuit comprising an oscillator and divider combination and using complementary MOSFET circuitry, the transistors formed at the high frequency end of the oscillator-divider chain have a lower threshold voltage than those at the low frequency end. When the oscillator operates at 4MHz for instance only the oscillator portion of the I.C. may use the low threshold voltage transistors but with higher frequencies, e.g. 14MHz, 250MHz, the first few stages of the divider also use them. The low threshold voltage transistors in the I.C. may be formed by ion implantation of boron in the channel region, by reducing the gate oxide film or by substituting a polycrystaline material such as silicon or molybdenum for the usual aluminium of the gate electrode. The I.C. is for use in a wrist watch and the divider circuit Fig. 4 (not shown) may be that of Specification 1413044.