Verfahren zur Herstellung einer Baueinheit für Hochspannungsgleichrichter

1,199,960. Semi-conductor devices. SIEMENS A.G. 28 Dec., 1967 [30 Dec., 1966], No. 58964/67. Heading H1K. A number of semi-conductor devices each comprising a plurality of series connected diodes forming a column are produced by mechanically and electrically connecting together the faces of a plurality of wafers of semi-conductor material, each wafer containing a PN junction, to form a stack which is then sawn into columns by two intersecting series of parallel cuts. The wafers may be of silicon and the faces may be soldered together or joined by means of a conductive lacquer. The wafers may have electrodes of nickel, gold or silver. The electrode on one face of each wafer may be gold and the electrode on the opposite face may be of silver so that adjacent wafers of the stack may be connected together by diffusion soldering. The stack of wafers may be bonded to an auxiliary device so that after the first series of parallel cuts the strips are retained in their relative positions and may be rotated through a right angle to position them for the second series of cuts. The columns are detached from the auxiliary device, connected to supply conductors and etched. Each column may be mounted in a housing which may itself be covered with plastics material. The columns may be etched before separation from the auxiliary device instead of afterwards.