Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld

1,045,108. Transistors. INTERNATIONAL BUSINESS MACHINES CORPORATION. Aug. 24, 1965 [Sept. 23, 1964], No. 36418/65. Heading H1K. A transistor is formed by a process comprising epitaxially growing a semi-conductor body having two regions of different basic material, said materials having different band gaps, and heating the body to cause diffusion from one region to the other so as to change the other region to the opposite conductivity type. In an embodiment, a layer of Ge is grown epitaxially on a substrate of GaAs to give a PP heterojunction. The device is then heated under arsenic pressure in a closed tube to 500‹ to 700‹ C., thus causing some As to diffuse out of the GaAs and into the germanium giving a device as shown in Fig. 2B. The device formed is a wide-gap emitter, drift field base transistor. In another embodiment a GaP substrate has a Si layer grown thereon and some of the phosphorus is subsequently diffused into the silicon.