Halbleitergerät und Verfahren zur Herstellung desselben

Material for a semi-conductor device comprises a solid solution of two AIV BVI compounds and one AI BV CVI2 compound of the general formula: with 0 < x, y < 1. Specific embodiments include (Ag0.35 Pb0.15 Sn0.15 Sb0.35)Te and a similar solid solution in which the Sb is replaced by Bi. The sele...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	FOLBERTH,OTTO GERT
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Material for a semi-conductor device comprises a solid solution of two AIV BVI compounds and one AI BV CVI2 compound of the general formula: with 0 < x, y < 1. Specific embodiments include (Ag0.35 Pb0.15 Sn0.15 Sb0.35)Te and a similar solid solution in which the Sb is replaced by Bi. The selection of Ag, Pb, Ge, Sb and Te specifically for A, B, C, D, E respectively in the general formula is also described. The material is prepared by fusing the pure elements in an exhausted quartz ampoule and then subjecting the material to a zone melting process.