METHOD FOR STABILIZING FET DEVICES HAVING SILICON GATES AND COMPOSITE NITRIDE-OXIDE GATE ECTRICS

METHOD FOR STABILIZING FET DEVICES HAVING SILICON GATES AND COMPOSITE NITRIDE-OXIDE GATE ECTRICS

Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C ap...

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Bibliographische Detailangaben
Hauptverfasser: NAGARAJAN, ARUNACHALA, DOCKERTY, ROBERT C, BARILE, CONRAD A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.