DEVICE AND METHOD FOR APPLYING A CARBON LAYER

The invention relates to a device (1) and method for applying a carbon layer, in particular a diamond layer, to a substrate (2, 2a) by means of chemical vapour deposition, comprising a deposition chamber (3) into which a process gas, in particular molecular hydrogen and/or a mixture of molecular hyd...

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Bibliographische Detailangaben
Hauptverfasser:	STEINMULLER, DETLEF, STEINMULLER-NETHL, DORIS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a device (1) and method for applying a carbon layer, in particular a diamond layer, to a substrate (2, 2a) by means of chemical vapour deposition, comprising a deposition chamber (3) into which a process gas, in particular molecular hydrogen and/or a mixture of molecular hydrogen and a carbon-containing gas, such as methane can be supplied, wherein a gas inlet and gas activation element (7) is provided in the form of a hollow body with a flow channel (7b) for the process gas, a wall (7a) surrounding the flow channel (7b), and an outlet opening (16) feeding from the flow channel (7b) into the deposition chamber (3), and a heating device (8) is provided for heating the wall (7a) of the gas inlet and gas activation element (7).