METHOD FOR PURIFYING AND CONDITIONING THE WATER-STEAM CIRCUIT OF A POWER PLANT, ESPECIALLY OF A NUCLEAR POWER PLANT

The invention relates to a method for purifying and conditioning the water-steam circuit (1) of a power plant, especially of a nuclear power plant. According to said method, an amine as the film-forming agent is metered to the working medium circulating in the water-steam circuit (1), said film-form...

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Bibliographische Detailangaben
Hauptverfasser:	RAMMINGER, UTE, FANDRICH, JORG, ROUMIGUIERE, FERNANDO-MARIO
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ENGINE PLANTS IN GENERAL HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING MACHINES OR ENGINES IN GENERAL MECHANICAL ENGINEERING METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAMTURBINES NUCLEAR ENGINEERING NUCLEAR PHYSICS NUCLEAR POWER PLANT NUCLEAR REACTORS PHYSICS STEAM ENGINES WEAPONS
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Beschreibung
Zusammenfassung:	The invention relates to a method for purifying and conditioning the water-steam circuit (1) of a power plant, especially of a nuclear power plant. According to said method, an amine as the film-forming agent is metered to the working medium circulating in the water-steam circuit (1), said film-forming agent forming a hydrophobic film on the surfaces of the circuit (1). During the process, the concentration of at least one impurity contained and the concentration of the film-forming agent at least in the feed water of the steam generator are monitored by way of measurement, and the concentration of the film-forming agent is varied subject to the concentration of the impurity.