SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE

According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on...

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Bibliographische Detailangaben

Hauptverfasser:	LILIENFELD, DAVID ALAN, MATOCHA, KEVIN SEAN, FRONHEISER, JODY ALAN, MICHAEL, JOSEPH DARRYL, HAWKINS, WILLIAM GREGG, ARTHUR, STEPHEN DALEY, JOHNSON, TAMMY LYNN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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