SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE

According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed on, within or below the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.