SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE

According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LILIENFELD, DAVID ALAN, MATOCHA, KEVIN SEAN, FRONHEISER, JODY ALAN, MICHAEL, JOSEPH DARRYL, HAWKINS, WILLIAM GREGG, ARTHUR, STEPHEN DALEY, JOHNSON, TAMMY LYNN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	LILIENFELD, DAVID ALAN MATOCHA, KEVIN SEAN FRONHEISER, JODY ALAN MICHAEL, JOSEPH DARRYL HAWKINS, WILLIAM GREGG ARTHUR, STEPHEN DALEY JOHNSON, TAMMY LYNN
description	According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed on, within or below the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CA2830801A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CA2830801A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CA2830801A13</originalsourceid><addsrcrecordid>eNrjZLAK9vTxdPb3U3B2DHLydHFVCHb1BfFdQp1D_IMUXFzDPJ1dFcI9QzwUHBXcHUNcFVx9XJ1DgvxdXHkYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSbyzo5GFsYGFgaGjoTERSgBHkSgy</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE</title><source>esp@cenet</source><creator>LILIENFELD, DAVID ALAN ; MATOCHA, KEVIN SEAN ; FRONHEISER, JODY ALAN ; MICHAEL, JOSEPH DARRYL ; HAWKINS, WILLIAM GREGG ; ARTHUR, STEPHEN DALEY ; JOHNSON, TAMMY LYNN</creator><creatorcontrib>LILIENFELD, DAVID ALAN ; MATOCHA, KEVIN SEAN ; FRONHEISER, JODY ALAN ; MICHAEL, JOSEPH DARRYL ; HAWKINS, WILLIAM GREGG ; ARTHUR, STEPHEN DALEY ; JOHNSON, TAMMY LYNN</creatorcontrib><description>According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed on, within or below the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=CA&NR=2830801A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=CA&NR=2830801A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LILIENFELD, DAVID ALAN</creatorcontrib><creatorcontrib>MATOCHA, KEVIN SEAN</creatorcontrib><creatorcontrib>FRONHEISER, JODY ALAN</creatorcontrib><creatorcontrib>MICHAEL, JOSEPH DARRYL</creatorcontrib><creatorcontrib>HAWKINS, WILLIAM GREGG</creatorcontrib><creatorcontrib>ARTHUR, STEPHEN DALEY</creatorcontrib><creatorcontrib>JOHNSON, TAMMY LYNN</creatorcontrib><title>SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE</title><description>According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed on, within or below the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAK9vTxdPb3U3B2DHLydHFVCHb1BfFdQp1D_IMUXFzDPJ1dFcI9QzwUHBXcHUNcFVx9XJ1DgvxdXHkYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSbyzo5GFsYGFgaGjoTERSgBHkSgy</recordid><startdate>20121004</startdate><enddate>20121004</enddate><creator>LILIENFELD, DAVID ALAN</creator><creator>MATOCHA, KEVIN SEAN</creator><creator>FRONHEISER, JODY ALAN</creator><creator>MICHAEL, JOSEPH DARRYL</creator><creator>HAWKINS, WILLIAM GREGG</creator><creator>ARTHUR, STEPHEN DALEY</creator><creator>JOHNSON, TAMMY LYNN</creator><scope>EVB</scope></search><sort><creationdate>20121004</creationdate><title>SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE</title><author>LILIENFELD, DAVID ALAN ; MATOCHA, KEVIN SEAN ; FRONHEISER, JODY ALAN ; MICHAEL, JOSEPH DARRYL ; HAWKINS, WILLIAM GREGG ; ARTHUR, STEPHEN DALEY ; JOHNSON, TAMMY LYNN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CA2830801A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LILIENFELD, DAVID ALAN</creatorcontrib><creatorcontrib>MATOCHA, KEVIN SEAN</creatorcontrib><creatorcontrib>FRONHEISER, JODY ALAN</creatorcontrib><creatorcontrib>MICHAEL, JOSEPH DARRYL</creatorcontrib><creatorcontrib>HAWKINS, WILLIAM GREGG</creatorcontrib><creatorcontrib>ARTHUR, STEPHEN DALEY</creatorcontrib><creatorcontrib>JOHNSON, TAMMY LYNN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LILIENFELD, DAVID ALAN</au><au>MATOCHA, KEVIN SEAN</au><au>FRONHEISER, JODY ALAN</au><au>MICHAEL, JOSEPH DARRYL</au><au>HAWKINS, WILLIAM GREGG</au><au>ARTHUR, STEPHEN DALEY</au><au>JOHNSON, TAMMY LYNN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE</title><date>2012-10-04</date><risdate>2012</risdate><abstract>According to one embodiment, a semiconductor device has a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed on, within or below the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; fre
recordid	cdi_epo_espacenet_CA2830801A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SILICON CARBIDE SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T18%3A38%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LILIENFELD,%20DAVID%20ALAN&rft.date=2012-10-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECA2830801A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true