A METHOD OF DIFFERENTIAL ETCHING OF THE SUBTERRANEAN FRACTURE

The present invention relates to the stimulation of wells penetrating subterranean formations. A method of differ-ential etching of the subterranean fracture wherein nonuniform deposition of a masking material on the fracture surface or face is provided; subsequent treatment by an acid or a reactive...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BURUKHIN, ALEXANDER ALEXANDROVICH, BARMATOV, EVGENY BORISOVICH, ELISEEVA, KSENIA EVGENIEVNA, LESKO, TIMOTHY MICHAEL, WILLBERG, DEAN
Format: Patent
Sprache:eng ; fre
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Beschreibung
Zusammenfassung:The present invention relates to the stimulation of wells penetrating subterranean formations. A method of differ-ential etching of the subterranean fracture wherein nonuniform deposition of a masking material on the fracture surface or face is provided; subsequent treatment by an acid or a reactive fluid generates a heterogeneous etch pattern on the fracture surface, the etch pattern is largely influenced by the placement geometry of the masking material upon closure these irregularities provide mis-match of geometry that leave open conductive channel in the fracture.