LOW COST MANUFACTURING OF MICRO-CHANNEL HEATSINK

A cooling device (10) includes a ceramic substrate (16) with a metal layer (22) bonded to an outer planar surface (18). The cooling device (10) also includes a channel layer (24) bonded to an opposite side of the ceramic substrate (16) and a manifold layer (26) bonded to an outer surface (28) of the...

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Bibliographische Detailangaben
Hauptverfasser:	BEAUPRE, RICHARD ALFRED, WOYCHIK, CHARLES GERARD, STEVANOVIC, LJUBISA DRAGOLJUB, ERNO, DANIEL JASON
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OFGENERAL APPLICATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEAT EXCHANGE IN GENERAL HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS,IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT HEATING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIGHTING MECHANICAL ENGINEERING PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING WEAPONS
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Beschreibung
Zusammenfassung:	A cooling device (10) includes a ceramic substrate (16) with a metal layer (22) bonded to an outer planar surface (18). The cooling device (10) also includes a channel layer (24) bonded to an opposite side of the ceramic substrate (16) and a manifold layer (26) bonded to an outer surface (28) of the channel layer (24). The substrate layers (16), (22), (24), (26) are bonded together using a high temperature process such as brazing to form a single substrate assembly (14). A plenum housing (30) is bonded to the single substrate assembly (14) via a low temperature bonding process such as adhesive bonding and is configured to provide extended manifold layer inlet and outlet ports (32), (34). Un appareil de refroidissement (10) comprend un substrat en céramique (16) doté dune couche métallique (22) liée à une surface planaire extérieure (18). Lappareil de refroidissement (10) comprend également une couche de canal (24) liée à un côté opposé du substrat en céramique (16) et une couche de collecteur (26) liée à une surface extérieure (28) de la couche de canal (24). Les couches de substrats (16, 22, 24, 26) sont liées ensemble au moyen dun procédé haute température comme le brasage pour former un ensemble de substrat (14). Un logement de vide (30) est lié à lensemble de substrat (14) par un procédé de liaison haute température comme le collage adhésif et est configuré pour fournir des orifices dentrée et de sortie (32, 34) de couche de collecteur étendu.