EXPLOSION-PROOF MODULE STRUCTURE FOR POWER COMPONENTS, PARTICULARLY POWER SEMICONDUCTOR COMPONENTS, AND PRODUCTION THEREOF

A power module having at least one electric power component, such as a power electronic semiconductor component. An electrical contact for a load current is formed on a lower surface and also on an upper surface of the power semiconductor component. To reduce an explosion pressure and accept power when the power electronic semiconductor component is overloaded, a hollow space filled with at least one electrically conducting particle is formed on an electrical contact surface of the electrical contact. In case of a short circuit, an arc is initially generated above the semiconductor element thickness of the power semiconductor component, whereupon the filling in the hollow space takes over current conduction. Preferably, the filling in the hollow space is a plurality of spherical electrically conducting particles. The explosion pressure can escape into interstices in the filling if there is a short circuit. Furthermore, metal vapors are cooled and are condensed. A duct extending from and out of the hollow space can additionally be provided to reduce the explosion pressure, thus preventing power components from demolishing the surroundings during an electrical overload. The foregoing power module may be an improved thyristor.