SEMICONDUCTOR STRUCTURE AND PROCESS FOR FORMING OHMIC CONNECTIONS TO A SEMICONDUCTOR STRUCTURE
A semiconductor apparatus is disclosed. The apparatus includes a first do ped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions. The first region has a first concentration of dopant and a first exposed area on the front surface. The...
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Format: | Patent |
Sprache: | eng ; fre |
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Zusammenfassung: | A semiconductor apparatus is disclosed. The apparatus includes a first do ped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions. The first region has a first concentration of dopant and a first exposed area on the front surface. The s econd region has a second concentration of dopant and a second exposed area on the front surface, the second concentration being higher than the first c oncentration. The apparatus also includes a first external conductor and an alloy bonding the first external conductor to the second exposed area to ohm ically connect the conductor to the second region. |
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