AVALANCHE PHOTODIODE FOR USE IN HARSH ENVIRONMENTS

An avalanche photodiode (APD) is provided for detecting ultraviolet photons. The APD comprises a substrate (110) having a first dopant; a first layer (111) having the first dopant, positioned on top of the substrate; a second layer (112) having a second dopant, positioned on top of the first layer;...

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Bibliographische Detailangaben
Hauptverfasser:	SANDVIK, PETER M, BROWN, DALE M, MATOCHA, KEVIN S, KRETCHMER, JAMES W, ARTHUR, STEPHEN D
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	An avalanche photodiode (APD) is provided for detecting ultraviolet photons. The APD comprises a substrate (110) having a first dopant; a first layer (111) having the first dopant, positioned on top of the substrate; a second layer (112) having a second dopant, positioned on top of the first layer; a third layer (114) having the second dopant, positioned on top of the second layer. A passivation layer (116, 122) provides electrical passivation on a surface of the APD. A phosphorous silicate, glass layer (124) positioned on top of the third layer limits mobile ion transport. A pair of metal electrodes (118, 120) provides an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer. The APD also includes a first sidewall and a second sidewall forming a sloped mesa shape. The APD operates in an environment comprising a temperature approximately equal to 150°C.