THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER

A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300pp...

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Bibliographische Detailangaben
Hauptverfasser:	COLLINS, JOHN LLOYD, TWITCHEN, DANIEL JAMES, COOPER, ANDREW MICHAEL, WHITEHEAD, ANDREW JOHN, SCARSBROOK, GEOFFREY ALAN, MARTINEAU, PHILIP MAURICE, DORN, BARBEL SUSANNE CHARLOTTE, SUSSMANN, RICARDO SIMON
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS BRACELETS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COINS CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HABERDASHERY HUMAN NECESSITIES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JEWELLERY METALLURGY OTHER PERSONAL ADORNMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer.