SILICON STRAIN GAGE HAVING A THIN LAYER OF HIGHLY CONDUCTIVESILICON

A semiconductor strain gage (10) having an electrically resistive substrate layer (12) and a layer of electrically conductive silicon (14) supported by the substrate layer. The silicon layer can be an epitaxial silicon layer gro wn on a surface of the substrate layer (12) or a diffused or ion-implan...

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Bibliographische Detailangaben

1. Verfasser:	GROSS, CHRIS
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS TESTING
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