SILICON STRAIN GAGE HAVING A THIN LAYER OF HIGHLY CONDUCTIVESILICON

SILICON STRAIN GAGE HAVING A THIN LAYER OF HIGHLY CONDUCTIVESILICON

A semiconductor strain gage (10) having an electrically resistive substrate layer (12) and a layer of electrically conductive silicon (14) supported by the substrate layer. The silicon layer can be an epitaxial silicon layer gro wn on a surface of the substrate layer (12) or a diffused or ion-implan...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: GROSS, CHRIS
Format: Patent
Sprache:eng ; fre
Schlagworte:
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A semiconductor strain gage (10) having an electrically resistive substrate layer (12) and a layer of electrically conductive silicon (14) supported by the substrate layer. The silicon layer can be an epitaxial silicon layer gro wn on a surface of the substrate layer (12) or a diffused or ion-implanted laye r formed on the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage (10) attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.