METHOD FOR PURIFYING SEMICONDUCTOR GASES
This invention is directed a method for purifying an impure gas to produce an ultra-high purity gas comprising the steps of a) passing the impure liquefied gas through a first absorption means to remove impurities from the liquid phase therein to produce a first purified fluid; b) passing the first...
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Format: | Patent |
Sprache: | eng ; fre |
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Zusammenfassung: | This invention is directed a method for purifying an impure gas to produce an ultra-high purity gas comprising the steps of a) passing the impure liquefied gas through a first absorption means to remove impurities from the liquid phase therein to produce a first purified fluid; b) passing the first purified fluid through an evaporation means to remove impurities therein to produce a second purified gas; and c) passing the second purified gas through a second absorption means to remove impurities from the vapor phase therein to produce the ultra-high purity gas. |
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