DIRECT SYNTHESIS PROCESS OF INDIUM PHOSPHIDE

Direct synthesis process of indium phosphide starting from indium and phosphorous characterized in that the synthesis takes place in a completely closed reaction system using a reactor in which at least two containers are used, one inside the other(s), the temperature being brought to a maximum valu...

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Bibliographische Detailangaben
Hauptverfasser:	MEREGALLI, LETIZIA, DANIELI, FRANCO, GUADALUPI, GIUSEPPE
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Direct synthesis process of indium phosphide starting from indium and phosphorous characterized in that the synthesis takes place in a completely closed reaction system using a reactor in which at least two containers are used, one inside the other(s), the temperature being brought to a maximum value ranging from 1070 to 1250.degree.C, preferably from 1100 to 1200.degree.C, and the pressure to a maximum ranging from 1850 to 2000 bars with a constant temperature increase with respect to the time, according to the following formula y = kx wherein y is the temperature in .degree.C, x is the time in minutes and k is a constant which has a value ranging from 5.degree.C/minute to 20.degree.C/minute.