SUPERCONDUCTOR CONSTRUCTION WITH GLASS SUBSTRATE AND HIGH-TEMPERATURE SUPERCONDUCTOR WHICH HAS BEEN DEPOSITED THEREON, AND PROCESS FOR PRODUCING THE CONSTRUCTION

The supraconductor structure (2) comprises a substrate (3) made of a temperature resistant glass material, a buffer layer (4) deposited on said substrate, and a layer (5) deposited thereon which is made of a metal oxidic high-Tc-supraconductor-material. A glass material should be provided which has...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	NIES, RAINER
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CONDUCTORS CRYSTAL GROWTH ELECTRICITY GLASS INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The supraconductor structure (2) comprises a substrate (3) made of a temperature resistant glass material, a buffer layer (4) deposited on said substrate, and a layer (5) deposited thereon which is made of a metal oxidic high-Tc-supraconductor-material. A glass material should be provided which has a thermal coefficient of expansion greater than 6 times 10-6 K-1 and a transformation temperature greater than 550 ~C. In order to produce the structure, at least one depositing method is selected in which the maximum temperature is no more than 100 K higher than the transformation temperature of the glass material.