GRID CONTROL ELECTRODE MANUFACTURING PROCESS FOR IGBT TRANSISTOR

Ce procédé de fabrication d'une électrode (28) de commande de grille pour transistor bipolaire à grille isolée, à partir d'une plaque de matériau électriquement conducteur recouverte d'une couche (22) électriquement isolante et délimitan t, sur une de ses grandes faces, un plot de connexion destiné à être soudé sur la grille, comporte les étapes consistant à former sur le plot une couche (30) de matériau électriquement conducteur recouvrant la couche (22) électriquement isolante, former sur la plaque une piste électriquement conductrice d'alimentation du plot de connexion, et enterrer la piste d'alimentation. Production of the gate electrode of an insulated-gate bipolar transistor (IGBT) starting with an electrically conducting plate (20) covered with an insulating layer (22) and having connection plots (26,28) to be joined by soldering to connection pads of an integrated circuit chip, includes forming a conducting layer (30) covering the insulating layer (22), forming a conducting supply track and covering the track. The plate (20) is made of anodized metallic material, e.g. aluminum, and the conducting layer (30) and the supply track are formed by local metallization of the anodized layer. The local metallization of anodized layer is carried out by a laser treatment, and after the laser treatment a layer of metal is applied to the formed track. The supply track is covered by a second insulating layer, which can be done by anodizing the track. The connection plot is further coated with a layer of an antioxidant material as e.g. nickel, chromium, gold, or an alloy of these metals.