SINGLE CRYSTAL SIC AND A METHOD OF PRODUCING THE SAME

A .beta.-SiC polycrystal plate (2) having a thickness of not less than 10 .mu.m is formed on the surface of an .alpha.-SiC single crystal substrate (1) by PVD or thermal CVD to prepare a composite (M), which is heat-treated in the temperature range of from 650 to 2400 .degree.C to transform the poly...

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Bibliographische Detailangaben
1. Verfasser:	TANINO, KICHIYA
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A .beta.-SiC polycrystal plate (2) having a thickness of not less than 10 .mu.m is formed on the surface of an .alpha.-SiC single crystal substrate (1) by PVD or thermal CVD to prepare a composite (M), which is heat-treated in the temperature range of from 650 to 2400 .degree.C to transform the polycrystal of the .beta.-SiC polycrystal plate (2) into a single crysta l, permitting a single crystal aligned in the same orientation as the crystal axis of the .alpha.-SiC single crystal substrate (1) to be grown. This proce ss serves to easily and efficiently prepare a high-quality single crystal of SiC substantially free from a micropipe defect and defects caused by the influence of the micropipe defect.