LASER MATERIAL
The invention pertains to quantum electronics and is useful for developi ng materials for laser techniques for use in solid state lasers with emitting wavelength of between 2.8 microns to 3.1 microns. The technical problem addressed by the invention is that of raising the gain of laser material, low...
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Zusammenfassung: | The invention pertains to quantum electronics and is useful for developi ng materials for laser techniques for use in solid state lasers with emitting wavelength of between 2.8 microns to 3.1 microns. The technical problem addressed by the invention is that of raising the gain of laser material, lowering the generation stimulation threshold, increasing th e generation efficiency and widening the available range of industrial generating systems with continuously variable emission wavelengths in the range 2.8 microns - 3.1 microns, including those operating in short-pulse generation and amplification modes. The invention is also aimed at preventing fissures forming in the crystal, reducing scattering, improving radiation durability, decreasing dissipation and reducing passive absorption in specific embodiments. The laser material has a garnet structure and contains between 0.025 formu la units (f.u.) and 2.95 f.u. of holmium and in addition at least one of the following elements: Li, Be, B, Na, Ca, Mg, Si, K, Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Ge, R b, Sr, Zr, Nb, Mo, W, Ta, Hf, Bi in quantities of between 1 x 10 17 cm-3 to 5x10 20 CM- 3. 12
The invention pertains to quantum electronics, specifically to materials for laser technology, and is intended for use in solid-state lasers with a generation wavelength of between 2.8 and 3.1 .mu.m. The technical problem addressed by the invention is that of raising the amplification coefficient of the laser material, lowering the stimulation threshold of generation, increasing generation efficiency and widening the available range of industrial generating systems with continuously variable emission wavelengths in the range 2.8-3.1 .mu.m, including those operating in short-pulse generation and amplification modes. In specific embodiments, the aim of the invention is also to prevent fissures forming in the crystal, reduce scattering, improve emission stability and reduce passive absorption. The laser material has a garnet structure and is characterised in that it contains between 0.025 and 2.95 f. units holmium and in addition at least one of the following elements: Li, Be, B, Na, Ca, Mg, Si, K, Ti, V, Mn, Fe, Co, Ni, Cu, Zn, Ge, Rb, Sr, Zr, Nb, Mo, W, Ta, Hf, Bi, in quantities of between 1 X 1017 cm-3 and 5 X 1020 cm-3. |
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