PRESSURE DETECTOR

A good quality passive-state film is formed on a gas-contact face of a diaphragm of a pressure detector using a sensor chip to prevent corrosion on, or water content emission from, or catalytic action at a gas-contact face, thereby improving production quality in a semiconductor manufacturing proces...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DOHI, RYOSUKE, IKEDA, NOBUKAZU, NISHINO, KOJI, OHMI, TADAHIRO
Format: Patent
Sprache:eng ; fre
Schlagworte:
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Beschreibung
Zusammenfassung:A good quality passive-state film is formed on a gas-contact face of a diaphragm of a pressure detector using a sensor chip to prevent corrosion on, or water content emission from, or catalytic action at a gas-contact face, thereby improving production quality in a semiconductor manufacturing process and providing high accuracy pressure detection. The passive-state film is formed on the gas-contact face of the diaphragm when the diaphragm is mounted on a diaphragm base. The diaphragm base is then fixedly secured to a sensor base in which a sensor chip is housed and a pressure transmitting medium is sealed in a gap between the sensor base and the diaphragm base.