LASER DIODE WITH AN ION-IMPLANTED REGION

LASER DIODE WITH AN ION-IMPLANTED REGION

A laser device and a method of fabrication are disclosed in which the device comprises one or more ion-implanted regions (37, 39) as a means to decrease the occurrence of device failures attributable to dark-line defects. The ionimplanted regions, which are formed between the laser gain cavity and t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DIXON, TODD MARTIN, BEYEA, DANA M, CLAUSEN, EDWARD M., JR
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A laser device and a method of fabrication are disclosed in which the device comprises one or more ion-implanted regions (37, 39) as a means to decrease the occurrence of device failures attributable to dark-line defects. The ionimplanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.