MAGNETRON SPUTTERING APPARATUS AND PROCESS

A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and intense plasma reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated proces...

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Bibliographische Detailangaben
Hauptverfasser:	MANLEY, BARRY W, SEDDON, RICHARD IAN, AUSTIN, R. RUSSEL, SCOBEY, MICHAEL A, SEESER, JAMES W.N, LEFEBVRE, PAUL M
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and intense plasma reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by scaling and high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.