SEMICONDUCTOR SUPER LATTICE HETEROSTRUCTURE FABRICATION METHODS, STRUCTURES AND DEVICES

A novel quantum well semiconductor structure is described wherein the quantum well is formed by growing a thin (?500.ANG.) epitaxial layer on a patterned (e.g. grooved) nonplanar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodici...

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Bibliographische Detailangaben
1. Verfasser:	KAPON, ELYAHOU
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A novel quantum well semiconductor structure is described wherein the quantum well is formed by growing a thin (?500.ANG.) epitaxial layer on a patterned (e.g. grooved) nonplanar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index guided GaAs/A/GaAs lasers are described.