PASSIVATION OF GALLIUM ARSENIDE SURFACES

PASSIVATION OF GALLIUM ARSENIDE SURFACES

A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by d...

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Hauptverfasser: SANDROFF, CLAUDE J, GMITTER, THOMAS J, YABLONOVITCH, ELI
Format: Patent
Sprache:eng ; fre
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SANDROFF, CLAUDE J
GMITTER, THOMAS J
YABLONOVITCH, ELI
description A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PASSIVATION OF GALLIUM ARSENIDE SURFACES
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