PASSIVATION OF GALLIUM ARSENIDE SURFACES
A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by d...
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| Format: | Patent |
| Sprache: | eng ; fre |
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| Zusammenfassung: | A method of passivating the surface of a gallium arsenide substrate by cleaning the gallium arsenide substrate in an etching solution and depositing a sulfide film on the substrate. The step of depositing the sulfide film is preferably performed by spin-on of a sodium sulfide solution, followed by drying or annealing. The resulting passivated surface exhibits superior surface recombination velocity characteristics compared to prior art passivation techniques, thereby making possible superior solid state device operating characteristics. |
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