SEMICONDUCTOR DEVICE FABRICATION INCLUDING A NON- DESTRUCTIVE METHOD FOR EXAMINING LITHOGRAPHICALLY DEFINED FEATURES
: The present invention relates to a method of semiconductor integrated circuit fabrication. The method comprises the steps of coating a substrate surface of at least one wafer of a lot having a plurality of wafers with a positive resist; exposing selectively the resist to radiation at least two tim...
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| creator | CUTHBERT, JOHN D YANG, TUNGSHENG SCHROPE, DENNIS E |
| description | : The present invention relates to a method of semiconductor integrated circuit fabrication. The method comprises the steps of coating a substrate surface of at least one wafer of a lot having a plurality of wafers with a positive resist; exposing selectively the resist to radiation at least two times, one of the times defining integrated circuit features and one of the times defining edge type features, at least one of the edge type features overlapping at least one of the integrated circuit features. The method further comprises developing the resist and examining at least one region where the integrated circuit features and edge type features overlap to produce a photocleave at the integrated circuit features and continuing device fabrication of the wafers of the lot if information derived from the photocleave is adequate. |
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The method comprises the steps of coating a substrate surface of at least one wafer of a lot having a plurality of wafers with a positive resist; exposing selectively the resist to radiation at least two times, one of the times defining integrated circuit features and one of the times defining edge type features, at least one of the edge type features overlapping at least one of the integrated circuit features. 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The method comprises the steps of coating a substrate surface of at least one wafer of a lot having a plurality of wafers with a positive resist; exposing selectively the resist to radiation at least two times, one of the times defining integrated circuit features and one of the times defining edge type features, at least one of the edge type features overlapping at least one of the integrated circuit features. 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The method comprises the steps of coating a substrate surface of at least one wafer of a lot having a plurality of wafers with a positive resist; exposing selectively the resist to radiation at least two times, one of the times defining integrated circuit features and one of the times defining edge type features, at least one of the edge type features overlapping at least one of the integrated circuit features. The method further comprises developing the resist and examining at least one region where the integrated circuit features and edge type features overlap to produce a photocleave at the integrated circuit features and continuing device fabrication of the wafers of the lot if information derived from the photocleave is adequate.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | SEMICONDUCTOR DEVICE FABRICATION INCLUDING A NON- DESTRUCTIVE METHOD FOR EXAMINING LITHOGRAPHICALLY DEFINED FEATURES |
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