SEMICONDUCTOR DEVICES HAVING FE-DOPED MOCVD INP-BASED LAYER

High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

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Bibliographische Detailangaben
Hauptverfasser:	JOHNSTON, WILBUR D., JR, WILT, DANIEL P, LONG, JUDITH A
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.