REVERSIBLE CHARGE STORAGE FLOATING GATE HETEROJUNCTION DEVICE

YO984-085 REVERSIBLE CHARGE STORAGE FLOATING GATE HETEROJUNCTION DEVICE A semiconductor storage device provides reversible control of conduction in a band offset heterojunction field effect transistor by providing an asymmetric barrier controlled charge storage capability that can position a potential well across the Fermi level to produce conduction and away from the Fermi level for a non-conducting condition and to retain that position in the absence of a signal. A GaAs channel FET with a multilayer gate of in order of proximity to the GaAs channel a gate layer of GaAlAs, a storage layer of GaAs, an asymmetric barrier layer of GaAlAs graded toward the GaAs storage layer and an ohmic adapting layer of GaAs.