INTEGRATED CIRCUIT CONTACT METHOD

INTEGRATED CIRCUIT CONTACT METHOD

INTEGRATED CIRCUIT CONTACT METHOD Source-drain to substrate shorts and allied problems related to misalignment of contact windows are curable in CMOS technology by a non-selective implant into the contact windows of both types. Key to success of the technique is designing devices and masks so the pr...

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Bibliographische Detailangaben
1. Verfasser: LANCASTER, LOREN T
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:INTEGRATED CIRCUIT CONTACT METHOD Source-drain to substrate shorts and allied problems related to misalignment of contact windows are curable in CMOS technology by a non-selective implant into the contact windows of both types. Key to success of the technique is designing devices and masks so the problem develops on one type of device in preference to the other and tailoring the dopant levels so the non-selective implant will selectively type-convert desired regions.