PROCESS FOR FORMING PATTERN WITH NEGATIVE RESIST

A process for forming patterns with a negative type resist which comprises the steps of forming a negative type resist film made of quinone diazide oligomer having a polymerization degree of 10 or less such as quinone diazide sulfonic ester on a substrate, irradiating selectively with far ultraviolet rays having a wavelength of 180 - 300 nm to expose the above film, and then developing the film thus exposed by the use of a suitable developer such as a solution containing any one of acetic ester, alkyl ketone and cyclohexanone, and another process wherein the above described exposing step is carried out in such a manner that the quinone diazide sulfonic ester film is subjected to blanket exposure by means of ultraviolet rays having a longer wavelength than 300 nm, and the resist film thus exposed is further subjected to selective exposure by means of far ultraviolet rays of 300 nm or less.