SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SEMICONDUCTOR AREAS

SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SEMICONDUCTOR AREAS Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crysta...

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Hauptverfasser: CELLER, GEORGE K, LISCHNER, DAVID J, ROBINSON, MCDONALD
Format: Patent
Sprache:eng ; fre
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Zusammenfassung:SEMICONDUCTOR DEVICES HAVING DIELECTRICALLY ISOLATED SEMICONDUCTOR AREAS Dielectrically isolated regions of single crystal silicon are produced through the use of a specific melting process. In this process, a substrate having regions of single crystal silicon contacting regions of non-single crystal silicon that overlie a dielectric materiel are treated. In particular, the entire region(s) of non-single crystal silicon is melted utilizing primarily radiant energy. Cooling is then initiated and the molten silicon is converted into a region of single crystal material. Isolation is completed by removing the appropriate regions of single crystal silicon.