ISFET SENSOR AND METHOD OF MANUFACTURE

There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain. regions with sidewall isolation being provided in the holes and m...

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Bibliographische Detailangaben
1. Verfasser:	BAXTER, RONALD D
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain. regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.