MONOLITHIC INPUT STAGE OF AN OPTICAL RECEIVER
The present invention relates to a monolithically designed input stage for an optical receiver, the input stage comprising a PIN photodiode and a connected field effect transistor. The PIN photodiode, which includes an absorption zone of GaInAsP for the optical radiation and a pn-junction formed by...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present invention relates to a monolithically designed input stage for an optical receiver, the input stage comprising a PIN photodiode and a connected field effect transistor. The PIN photodiode, which includes an absorption zone of GaInAsP for the optical radiation and a pn-junction formed by InP layers, is disposed together with the field effect transistor on a common semi-insulating InP substrate. |
|---|