SUPPORT AND ANCHORING MECHANISM FOR MEMBRANES IN SELECTIVELY RESPONSIVE FIELD EFFECT DEVICES

SUPPORT AND ANCHORING MECHANISM FOR MEMBRANES IN SELECTIVELY RESPONSIVE FIELD EFFECT DEVICES In the formation of a chemically sensitive field effect device, prior to formation of the gate membrane, an aluminum pad is disposed over the gate, and a polyimide layer is disposed thereover. Photoresist an...

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Bibliographische Detailangaben
1. Verfasser:	BLACKBURN, GARY F
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Zusammenfassung:	SUPPORT AND ANCHORING MECHANISM FOR MEMBRANES IN SELECTIVELY RESPONSIVE FIELD EFFECT DEVICES In the formation of a chemically sensitive field effect device, prior to formation of the gate membrane, an aluminum pad is disposed over the gate, and a polyimide layer is disposed thereover. Photoresist and etching steps produce openings in the polyimide to form a gridwork which is anchored to the device on the periphery of the gate. The aluminum layer is etched completely away, forming a void defined by the suspended polyimide mesh on one side, and the gate insulator on the other. Polymeric membrane is formed in the void by insertion in liquid form.