POWER MOSFET INTEGRATED CIRCUIT

POWER MOSFET INTEGRATED CIRCUIT

POWER MOSFET INTEGRAIED CIRCUIT In power MOSFETS, lead resistance loss is an important device design consideration. These devices typically use, for gate electrodes, sheets of polysilicon in order to provide low input impedance. Likewise, the source electrodes are integrated together in a sheet-like...

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Bibliographische Detailangaben
Hauptverfasser: POTTEIGER, DONALD C, CLARKE, PATRICK W, HELM, GEORGE D
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:POWER MOSFET INTEGRAIED CIRCUIT In power MOSFETS, lead resistance loss is an important device design consideration. These devices typically use, for gate electrodes, sheets of polysilicon in order to provide low input impedance. Likewise, the source electrodes are integrated together in a sheet-like structure. According to the invention, the sheet electrodes are perforated in a prescribed fashion to improve the high frequency performance of the device by reducing interelectrode capacitance.