METHOD FOR MAKING SHORT CHANNEL TRANSISTOR DEVICES

METHOD FOR MAKING SHORT CHANNEL TRANSISTOR DEVICES

Levinstein, H.?. 28 METHOD FOR MAKING SHORT CHANNEL TRANSISTOR DEVICES An oxide coating on the top and side surfaces of a polycrystalline silicon gate electrode is anisotropically etched at the same time that an oxide coating on the source and drain regions is etched, whereby the oxide is completely...

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Bibliographische Detailangaben
1. Verfasser: LEVINSTEIN, HYMAN J
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Levinstein, H.?. 28 METHOD FOR MAKING SHORT CHANNEL TRANSISTOR DEVICES An oxide coating on the top and side surfaces of a polycrystalline silicon gate electrode is anisotropically etched at the same time that an oxide coating on the source and drain regions is etched, whereby the oxide is completely removed from the source and drain regions but not from the top or side surface of the gate electrode.