SHALLOW HOMOJUNCTION SOLAR CELLS

The disclosure teaches a method of applying an electrical contact and an anodic antireflection coating to an n+ layer of a direct gap semiconductor device. In accordance with the invention, a metal contact is applied to the n+ type layer. The metal contact must be anodizable, Thereafter, the n+ laye...

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Bibliographische Detailangaben
Hauptverfasser:	BOZLER, CARL O, MCCLELLAND, ROBERT W, CHAPMAN, RALPH L, FAN, JOHN C. C
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	The disclosure teaches a method of applying an electrical contact and an anodic antireflection coating to an n+ layer of a direct gap semiconductor device. In accordance with the invention, a metal contact is applied to the n+ type layer. The metal contact must be anodizable, Thereafter, the n+ layer is anodized whereby its thickness is reduced and an antireflection layer is formed thereover. The anodizable metal may comprise tin.