MIS HETEROJUNCTION STRUCTURES

MIS HETEROJUNCTION STRUCTURES

MIS HETEROJUNCTION STRUCTURES In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched heterojunction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes an indirect ga...

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Bibliographische Detailangaben
Hauptverfasser: NICOLLIAN, EDWARD H, CASEY, HORACE C., JR, CHO, ALFRED Y
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:MIS HETEROJUNCTION STRUCTURES In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched heterojunction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes an indirect gap AlGaAs I-layer doped with a deep level impurity such as oxygen, iron or chromium, and a GaAs S-layer. GaAs FETs incorporating this MIS structure are described. CASEY, H. C. 5-16-8