METHODS FOR FABRICATING SELF-ALIGNED BIPOLAR TRANSISTORS HAVING POLYSILICON BASE CONTACTS WITH POLYSILICON OR METAL EMITTER CONTACTS

METHODS FOR FABRICATING SELF-ALIGNED BIPOLAR TRANSISTORS HAVING POLYSILICON BASE CONTACTS WITH POLYSILICON OR METAL EMITTER CONTACTS

METHODS FOR FABRICATING SELF-ALIGNED BIPOLAR TRANSISTORS HAVING POLYSILICON BASE CONTACTS WITH POLYSILICON OR METAL EMITTER CONTACTS A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact form...

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Bibliographische Detailangaben
Hauptverfasser: YU, HWA N, NING, TAK H
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:METHODS FOR FABRICATING SELF-ALIGNED BIPOLAR TRANSISTORS HAVING POLYSILICON BASE CONTACTS WITH POLYSILICON OR METAL EMITTER CONTACTS A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter. YO977-058