OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY

OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY

OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY ABSTRACT OF THE DISCLOSURE Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junction...

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Bibliographische Detailangaben
Hauptverfasser: SHIH, KWANG K, HUNG, ROLAND Y
Format: Patent
Sprache:eng ; fre
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:OPTICALLY ISOLATED MONOLITHIC LIGHT EMITTING DIODE ARRAY ABSTRACT OF THE DISCLOSURE Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite side of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.