SEMICONDUCTOR DEVICE MADE BY ION IMPLANTATION

Specification Specification Title of the Invention SEMICONDUCTOR DEVICE MADE BY ION IMPLANTATION The semiconductor device is suitable to fabricate an integrated circuit. A SiO2 insulating film is formed on one surface of a silicon substrate and a buried SiO2 layer is formed at a depth from the other surface of the substrate. A plurality of regions diffused with an impurity and used to fabricate a transistor is formed in a layer of the-substrate between the burried SiO2 layer and the other surface of the substrate. A plurality of electrodes-are formed on the other surface of the substrate so as to use said regions as the component elements of the transistor.