METHOD OF PREPARING CRYSTALLINE COMPOUNDS AIVA BVIA

A method of preparing crystalline compounds AIVABVIA, wherein AIVA is Si, Ge, Sn, Pb; BVIA is S, Se, Te; which comprises thermal decomposition, at the surface of a substrate heated to a temperature ranging from 250 to 450.degree.C, of an elementoorganic compound containing chemically combined elemen...

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Hauptverfasser:	NESTEROV, BORIS A, KAVERIN, BORIS S, DOMRACHEV, GEORGY A, KHAMYLOV, VYACHESLAV K, BOCHKAREV, MIKHAIL N, KIRILLOV, ALEXAND I, ZHUK, BORIS V
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of preparing crystalline compounds AIVABVIA, wherein AIVA is Si, Ge, Sn, Pb; BVIA is S, Se, Te; which comprises thermal decomposition, at the surface of a substrate heated to a temperature ranging from 250 to 450.degree.C, of an elementoorganic compound containing chemically combined elements AIVA and BVIA with the generic formula RkA1IVABmVIAR'n, wherein AIVA is Si, Ge, Sn, Pb; BVIA is S, Se, Te; R and R' are hydrogen or an alkyl with 1 to 4 carbon atoms; k = 0-6, 1 = 1-2, m = 1 -2. the method according to the present invention makes it possible to substantially reduce the decomposition temperature of the starting elementoorganic compound at the substrate surface and to obtain the final products which are stoichiometric in the composition thereof. The present invention is useful in the manufacture of semiconductor elements and protective coatings.